Method for manufacturing a sic electronic device with reduced handling steps, and sic electronic device

An electronic device, comprising:

• a substrate of silicon carbide (SiC), the substrate having a front side and a back side opposite to each other along a direction;
• a structural layer of SiC extending at the front side of the substrate;
• active regions extending in said structural layer, the active regions configured to generate or conduct electric current during the use of the electronic device;
• a first electric terminal extending on said structural layer;
• an intermediate layer of compounds of a first metal at the back side of the substrate, the first metal including at least one of Titanium, Molybdenum, Tantalum, Tungsten, or Cobalt;
• and
• a second electric terminal extending on the intermediate layer.

A system for manufacturing an electronic device, comprising:

• a first reaction chamber for the formation of a structural layer of silicon carbide (SiC) at a front side of a substrate of SiC;
• a second reaction chamber for the formation of active regions in said structural layer, said active regions configured to generate or conduct electric current during the use of the electronic device;
• a third reaction chamber for the formation of a first electric terminal on said structural layer and of an intermediate layer of a metal at the back side of the substrate, the metal including at least one of Titanium, Molybdenum, Tantalum, Tungsten, or Cobalt;
• and
• a LASER device, configured to generate a LASER beam dirigible towards selective portions of the intermediate layer so as to heat said selective portions in order to generate local heating at a temperature in a range 1400° C.-2600° C., favoring a formation of compounds of said metal at the selective portions.