Semiconductor device structure with fine patterns at different levels and method for forming the same

Abstract

The present disclosure provides a semiconductor device structure with fine patterns at different levels and a method for forming the semiconductor device structure, which can prevent the collapse of the fine patterns and reduces the parasitic capacitance between fine patterns The semiconductor device structure includes a substrate; a first target structure disposed over the substrate, wherein the first target structure comprises a first portion, a second portion, and a third portion, a height of the first portion and a height of the second portion are greater than a height of the third portion; a second target structure disposed over the target layer, wherein the second target structure comprises a fourth portion, a fifth portion, and a sixth portion: a low-level conductive pattern positioned between the first target structure and the second target structure; and a high-level conductive pattern positioned in the first target structure.

Dependencies are inferred from the claim text.