Vapor Deposition Of Carbon-Based Films
AssigneesApplied Materials, Inc., National University of Singapore
InventorsBhaskar Jyoti Bhuyan, Andrea Leoncini
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Abstract
Methods of forming graphene hard mask films are disclosed. Some methods are advantageously performed at lower temperatures. The substrate is exposed to an aromatic precursor to form the graphene hard mask film. The substrate comprises one or more of titanium nitride (TiN), tantalum nitride (TaN), silicon (Si), cobalt (Co), titanium (Ti), silicon dioxide (SiO2), copper (Cu), and low-k dielectric materials.
Claims20
A method of forming a film, the method comprising:
- exposing a substrate to an aromatic precursor in a processing chamber;
- purging the processing chamber of the aromatic precursor;
- heating the substrate to a temperature less than 600° C. to polymerize the aromatic precursor and deposit a graphene hard mask film on the substrate;
- and
- purging the processing chamber.
A method of forming a film, the method comprising:
- forming a flowable graphene hard mask film on a substrate by exposing the substrate to an aromatic precursor;
- and
- exposing the substrate to a plasma.
A non-transitory computer readable medium including instructions, that, when executed by a controller of a processing chamber, causes the processing chamber to perform operations of:
- expose a substrate to an aromatic precursor in the processing chamber;
- purge the processing chamber of the aromatic precursor;
- heat the substrate to a temperature less than 600° C. to polymerize the aromatic precursor and deposit a graphene hard mask film on the substrate;
- and
- purge the processing chamber.
Dependencies are inferred from the claim text.