Manufacturing method and support of semiconductor device

Abstract

A manufacturing method of an embodiment of a semiconductor device, the manufacturing method includes: heating a second layer of a first member including a first layer, the second layer, and a third layer, in which the first layer includes a support layer, the second layer includes a compound containing carbon and at least one element selected from the group consisting of silicon and metals, the third layer includes a semiconductor layer and/or a wiring layer, and the second layer is located between the first layer and the third layer, and obtaining a second member in which a carbonaceous material layer is formed on a surface of the second layer and/or a carbonaceous material region is formed inside the second layer; and cleaving the second member from the carbonaceous material layer or the carbonaceous material region, and obtaining a third member including the third layer.

Dependencies are inferred from the claim text.