Semiconductor Devices and Methods of Manufacture

A semiconductor device comprising:

• a gate dielectric overlying a channel region of a semiconductor fin, the gate dielectric comprising a crystallized region that is less than 3 nm thick;
• a dopant embedded within the crystallized region, the dopant having a concentration gradient within the crystallized region;
• and
• a gate electrode located on an opposite side of the gate dielectric from the channel region.

A semiconductor device, comprising:

• a semiconductor fin over a semiconductor substrate;
• a gate dielectric over the semiconductor fin, the gate dielectric having a thickness of less than 3 nm and having a first crystalline orientation;
• a capping layer adjacent to and in physical contact with at least a portion of the gate dielectric;
• and
• a gate electrode overlying the gate dielectric and the capping layer, the gate electrode extending through the capping layer to physically contact a portion of the gate dielectric.