Deposition method
AssigneeTokyo Electron Limited
InventorsKoji SASAKI, Keisuke SUZUKI, Tomoya HASEGAWA
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Abstract
A deposition method of forming silicon oxide films collectively on a plurality of substrates in a processing container performs a plurality of execution cycles each of which includes: supplying a silicon material gas containing an organoamino-functionalized oligosiloxane compound into the processing container; and supplying an oxidizing gas into the processing container adjusted to a pressure of 1 Torr to 10 Torr (133 Pa to 1333 Pa).
Claims5
A deposition method of forming silicon oxide films collectively on a plurality of substrates in a processing container, the deposition method performing a plurality of execution cycles each of which includes:
- supplying a silicon material gas containing an organoamino-functionalized oligosiloxane compound into the processing container;
- and
- supplying an oxidizing gas into the processing container adjusted to a pressure of 1 Torr to 10 Torr (133 Pa to 1333 Pa).
Dependencies are inferred from the claim text.