Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
AssigneeKokusai Electric Corporation
InventorsHiroki YAMASHITA, Yoshitomo HASHIMOTO
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Abstract
There is included (a) forming a first film containing at least oxygen and carbon and having a concentration of carbon, which is 20 at % or more, on a substrate by supplying a film-forming gas to the substrate at a first temperature; and (b) modifying the first film into a second film by supplying an oxygen- and hydrogen-containing gas to the substrate on which the first film is formed, at a second temperature that is equal to or higher than the first temperature.
Claims20
A method of manufacturing a semiconductor device, comprising:
- (a) forming a first film containing at least oxygen and carbon and having a concentration of carbon, which is 20 at % or more, on a substrate by supplying a film-forming gas to the substrate at a first temperature;
- and
- (b) modifying the first film into a second film by supplying an oxygen- and hydrogen-containing gas to the substrate on which the first film is formed, at a second temperature that is equal to or higher than the first temperature.
A substrate processing apparatus comprising:
- a process chamber in which a substrate is processed;
- a film-forming gas supply system configured to supply a film-forming gas to the substrate in the process chamber;
- an oxygen- and hydrogen-containing gas supply system configured to supply an oxygen- and hydrogen-containing gas to the substrate in the process chamber;
- and
- a controller configured to be capable of controlling the film-forming gas supply system and the oxygen- and hydrogen-containing gas supply system so as to perform:
- (a) forming a first film containing at least oxygen and carbon and having a concentration of carbon, which is 20 at % or more, on the substrate by supplying the film-forming gas to the substrate at a first temperature;
- and
- (b) modifying the first film into a second film by supplying the oxygen- and hydrogen-containing gas to the substrate on which the first film is formed, at a second temperature that is equal to or higher than the first temperature.
A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process in a process chamber of the substrate processing apparatus, the process comprising:
- (a) forming a first film containing at least oxygen and carbon and having a concentration of carbon, which is 20 at % or more, on a substrate by supplying a film-forming gas to the substrate at a first temperature;
- and
- (b) modifying the first film into a second film by supplying an oxygen- and hydrogen-containing gas to the substrate on which the first film is formed, at a second temperature that is equal to or higher than the first temperature.
Dependencies are inferred from the claim text.