Film stress control for plasma enhanced chemical vapor deposition

A showerhead, comprising:

• a plurality of perforated members, each of the perforated members supported by adjacent support members of a plurality of support members;
• a plurality of dielectric plates disposed above the plurality of perforated members, each dielectric plate supported by the adjacent support members, wherein
• a respective perforated member, a respective dielectric plate, and the adjacent support members define a gas volume, the gas volume in fluid communication with the adjacent support members;
• and
• a respective dielectric plate, the showerhead, and the adjacent support members define a coil volume;
• and
• a plurality of inductive coils, each inductive coil supported by each dielectric plate in the coil volume.

A method, comprising:

• disposing a substrate onto a substrate support, the substrate support disposed in a processing region of a chamber body;
• providing precursor gases from a gas source to a plurality of gas volumes of a showerhead, each gas volume defined by a respective perforated member, a respective dielectric plate disposed above the respective perforated member, and adjacent support members, the providing the precursor gases to the plurality of gas volumes comprises flowing the precursor gases through conduits disposed in each of the adjacent support members;
• supplying RF power to each respective dielectric plate to form energized precursor gases in the plurality of gas volumes;
• flowing the energized precursor gases through each respective perforated member into the processing region of the chamber body;
• and
• applying a DC bias to a substrate bias plate disposed in the substrate support to bias the energized precursor gases toward the substrate.