Method for manufacturing high-profile and high-capacitance capacitor

A method for manufacturing a capacitor, the method comprising:

• providing a substrate;
• forming a first mold layer, a first supporter layer, a second mold layer, and a second supporter layer on the substrate in that order, wherein at least one of the first mold layer and the second mold layer are made of a dielectric material having a low dielectric constant or a super low dielectric constant;
• defining at least one contact hole passing through the second supporter layer, the second mold layer, the first supporter layer, and the first mold layer, wherein the first supporter layer and the second supporter layer having the at least one contact hole form a first supporter pattern and a second supporter pattern, respectively;
• forming a lower electrode on an inner surface of the at least one contact hole, causing the first supporter pattern and the second supporter pattern to be positioned at a sidewall of the lower electrode;
• and
• removing the first mold layer and the second mold layer, wherein the first mold layer and/or the second mold layer being made of the dielectric material are removed by ashing.