Integrated circuit structure with dielectric material to cover horizontally separated metal layers, and related method

An inductor structure, comprising:

• a metal coil including a plurality of linearly connected metal layers on a substrate, the plurality of linearly connected metal layers including a first metal layer on the substrate and a second metal layer on the substrate having a portion horizontally separated from the first metal layer;
• a dielectric material including:
• a first portion on the first metal layer of the metal coil, and having a first upper surface,
• a second portion on the second metal layer of the metal coil, and having a second upper surface, and
• a third portion on the substrate between the first metal layer and the second metal layer of the metal coil, wherein the third portion of the dielectric material includes a third upper surface above the first upper surface of the first portion and the second upper surface of the second portion of the dielectric material;
• a magnetic material on the dielectric material above the first metal layer of the metal coil;
• and
• a via contacting an upper surface of the second metal layer of the metal coil, and extending through the second portion of the dielectric material.

A method of forming an integrated circuit (IC) structure, the method comprising:

• forming a first metal layer and a second metal layer on a substrate, wherein the second metal layer is horizontally separated from the first metal layer;
• forming a first dielectric material on the substrate between the first metal layer and the second metal layer, wherein the first dielectric material includes an upper surface above the first metal layer and the second metal layer;
• and
• forming a second dielectric material on the first metal layer, the second metal layer, and the first dielectric material, wherein the second dielectric material includes a first portion having a first upper surface over the first metal layer, a second portion having a second upper surface over the second metal layer, and third portion having a third upper surface over the substrate between the first portion and the second portion, wherein the third upper surface is above the first upper surface of the first portion and the second upper surface of the portion of the dielectric material.