Methods of enhancing speed of reading data from memory device
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsKe Liang, Li Xiang
Life of this patent
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Abstract
A memory device includes an array of memory cells, a plurality of word lines coupled to the array of memory cells, a controller configured to control a read operation on the array of memory cells, and a row decoder coupled to the word lines and the controller and configured to, in the read operation, induce a coupling effect between a select word line and an adjacent unselect word line of the plurality of word lines, and discharge the select word line to a start read level due to at least the coupling effect.
Claims20
A memory device, comprising:
- an array of memory cells;
- a plurality of word lines coupled to the array of memory cells;
- a controller configured to control a read operation on the array of memory cells;
- and
- a row decoder coupled to the word lines and the controller and configured to, in the read operation:
- induce a coupling effect between a select word line and an unselect word line of the plurality of word lines, the select word line and the unselect word line being adjacent to one another;
- and
- discharge the select word line to a start read level due to at least the coupling effect.
A method for performing a read operation on a memory device, the memory device comprising an array of memory cells, and a plurality of word lines coupled to the array of memory cells, the method comprising:
- inducing a coupling effect between a select word line and an unselect word line of the plurality of word lines, the select word line and the unselect word line being adjacent to one another;
- and
- discharging the select word line to a start read level due to at least the coupling effect.
Dependencies are inferred from the claim text.