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US 2021/0280253 A1Published application
Sequential write and sequential write verify in memory device
AssigneeMicron Technolgy, Inc.
InventorKoji Sakui
Life of this patent
Estimating the term…
Abstract
Some embodiments include apparatuses and methods for performing a first stage of an operation of storing information in a first memory cell and a second memory cell, and performing a second stage of the operation after the first stage to determine whether each of the first and second memory cells reaches a target state. The first memory cell is included in a first memory cell string coupled to a data line through a first select transistor. The second memory cell is included in a second memory cell string coupled to the data line through a second select transistor.
Claims1
An apparatus comprising:
- a data line;
- a first memory cell included in a first memory cell string;
- a second memory cell included in a second memory cell string;
- an access line shared by the first and second memory cells;
- and
- a module to:
- change a value of a threshold voltage of the first memory cell during a first time interval of an operation of the apparatus;
- change a value of a threshold voltage of the second memory cell during a second time interval of the operation;
- and
- determine, during a third time interval after the first and second time intervals, whether the first memory cell reaches a first target threshold voltage and whether the second memory cell reaches a second target voltage.
7 more elements
Dependencies are inferred from the claim text.