Selector device for two-terminal memory
AssigneeCrossbar, Inc.
InventorSung Hyun JO
Life of this patent
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Abstract
Solid-state memory having a non-linear current-voltage (I-V) response is provided. By way of example, the solid-state memory can be a selector device. The selector device can be formed in series with a non-volatile memory device via a monolithic fabrication process. Further, the selector device can provide a substantially non-linear I-V response suitable to mitigate leakage current for the non-volatile memory device. In various disclosed embodiments, the series combination of the selector device and the non-volatile memory device can serve as one of a set of memory cells in a 1-transistor, many-resistor resistive memory cell array.
Claims1
A method for forming a selector device for a two-terminal memory device, comprising:
- providing a first layer structure comprising a first metal material;
- providing a layer of selector material in contact with the first layer structure;
- and
- providing a second layer structure comprising a second metal material and in contact with the layer of the selector material, wherein:
- the first metal material is configured to provide conductive ions to the selector material in response to a voltage applied across the first layer structure and the second layer structure,
- the selector material is configured to allow the conductive ions to permeate within the layer of selector material in response to the voltage applied across the first layer structure and the second layer structure,
- the first layer structure, the layer of selector material, and the second layer structure form the selector device, and
- the selector device is disposed in electrical series with the two-terminal memory device.
Dependencies are inferred from the claim text.