Semiconductor storage device

A semiconductor storage device comprising:

• a plurality of first lines;
• a plurality of second lines;
• a plurality of memory cells respectively connected between the first lines and the second lines;
• a plurality of third lines provided to respectively correspond to groups each comprising m (m≥2) lines of the first lines;
• a first selection circuit configured to select a certain one of the first lines from each of the groups and to connect the selected first lines to the third lines corresponding to the groups, respectively;
• at least one fourth line provided to correspond to the third lines;
• a second selection circuit configured to select a certain one of the third lines and to connect the fourth line to the selected third line;
• a third selection circuit configured to select a certain one of the second lines;
• a first driver configured to apply a voltage to the fourth line;
• and
• a second driver connected to the third selection circuit, wherein
• the first driver charges the third line corresponding to the first line selected from at least one of the groups via the fourth line,
• the first and second selection circuits bring the selected first line and the third line corresponding the first line to an electrically floating state, and
• the second driver applies a voltage to the selected second line.