Semiconductor memory device and method for operating the same

A semiconductor memory device comprising:

• a memory cell array with a plurality of memory cells programmed to first to nth program states, wherein n is a positive integer greater than 2;
• a peripheral circuit configured to perform a program operation on selected memory cells among the plurality of memory cells through a plurality of program loops;
• a current sensing circuit configured to perform individual state current sensing operations, respectively corresponding to the first to nth program states on the selected memory cells among the memory cells;
• and
• a control logic configured to control the peripheral circuit to perform the program operation, and control the current sensing circuit to skip the individual state current sensing operation that corresponds to the first program state during an initial m program loops among the plurality of program loops, wherein m is a positive integer greater than 1.

A method for operating a semiconductor memory device, the method comprising:

• performing a first program operation that corresponds to a first program state among a plurality of program states;
• and
• performing a second program operation that corresponds to a second program state of threshold voltage distribution is higher than that of the first program state, after the first program operation is completed,
• wherein a plurality of first program loops are sequentially performed in the first program operation,
• wherein each of initial m (m is a positive integer greater than 1) program loops among the plurality of first program loops includes a program pulse application operation and a verify operation, and
• wherein each of (m+1)th to last program loops among the plurality of first program loops includes the program pulse application operation, the verify operation, and an individual state current sensing operation that corresponds to the first program state.