Memory device and method of operating the same

A memory device comprising:

• a memory block;
• at least two or more page buffer groups connected to bit lines of the memory block;
• and
• control logic configured to control a read operation for the memory block by controlling the two or more page buffer groups,
• wherein the control logic controls activation timings of the two or more respective page buffer groups to be different from each other during a sense node precharge operation of the read operation.

A method of operating a memory device, the method comprising:

• precharging bit lines of a memory block to a set level, and applying a read voltage to a selected word line of the memory block;
• precharging a sense node of each of first page buffers and second page buffers connected to the bit lines, and controlling a timing for precharging the sense node of the first page buffers and a timing for precharging the sense node of the second page buffers to be different from each other;
• performing an evaluation operation to control a potential level of the sense node of the first page buffers and the sense node of the second page buffers based on a current amount of the bit lines;
• and
• sensing the potential level of the sense node of the first page buffers and the sense node of the second page buffers.