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US 2021/0277031 A1Published application
Silicon precursor and method of manufacturing silicon-containing thin film using the same
AssigneeHansol Chemical Co., Ltd.
InventorsJae-Seok AN, Jong-Ryul PARK, Min-Hyuk NIM, Jang-Hyeon SEOK, Jung Woo PARK
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Abstract
The present invention relates to a vapor deposition compound capable of thin film deposition through vapor deposition, and particularly to a silicon precursor capable of being applied to ALD or CVD, and specifically, enabling high temperature deposition, and a method of manufacturing a silicon-containing thin film.
Claims9
A method of manufacturing a thin film, comprising:
- introducing a vapor deposition precursor including any one or more compounds selected from the group consisting of a compound represented by Formula 1 below and a compound represented by Formula 2 below:
- SiR1a(NR2R3)(4-a) [Formula 1]
- In Formula 1,
- a is an integer of 1 to 3,
- R1 is a linear or branched, substituted or unsubstituted C1 to C4 hydrocarbon or an isomer thereof, and
- R2 and R3 are each independently hydrogen, a linear or branched, substituted or unsubstituted C1 to C4 hydrocarbon, or an isomer thereof.
- SiR4bR5c(X1)(4-b-c) [Formula 2]
- In Formula 2,
- each of b and c is an integer of 0 to 3,
- the sum of b and c is an integer of 1 to 3,
- X1 is a halogen group selected from the group consisting of Cl, Br, and I, and
- R4 and R5 are each independently a linear or branched, substituted or unsubstituted C1 to C4 hydrocarbon, an unsubstituted C6 to C12 cyclic hydrocarbon, or an isomer thereof.
9 more elements
Dependencies are inferred from the claim text.