Proton-based two-terminal volatile memristive devices

Abstract

Technologies relating to crossbar array circuits with proton-based two-terminal volatile memristive devices are disclosed. An example apparatus includes: a first bottom conductive layer, a first switching oxide layer formed on the first bottom conductive layer, a first top conductive layer formed on the first switching oxide layer, an intermediate layer formed on the first top conductive layer, a second bottom conductive layer formed on the intermediate layer, a second oxide layer whose conductance can be modulated by H-dopant formed on the second bottom conductive layer; and a proton reservoir layer formed on the second oxide layer, wherein the second bottom conductive layer is H-doped.

Dependencies are inferred from the claim text.