A quantum processing system
AssigneeNewSouth Innovations Pty Limited
InventorsBenoit VOISIN, Joseph SALFI, Sven ROGGE
Life of this patent
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Abstract
A quantum processing system is disclosed. In one embodiment, a quantum processing system comprises: a plurality of donor atoms positioned in a silicon crystal substrate, each donor atom positioned at a donor site; and a plurality of conductive control electrodes arranged about the donor atoms to operate the donor atoms as qubits. Where, at least two pairs of nearest neighbour donor atoms of the plurality of donor atoms are arranged along the [110] direction of the silicon crystal substrate and are configured to operate as qubits.
Claims22
A quantum processing system comprising:
- a plurality of donor atoms positioned in a silicon crystal substrate, each donor atom positioned at a donor site;
- a plurality of conductive control electrodes arranged about the donor atoms to operate the donor atoms as qubits;
- wherein at least two pairs of nearest neighbour donor atoms of the plurality of donor atoms are arranged along the direction of the silicon crystal substrate and are configured to operate as qubits.
A quantum processing system comprising:
- a plurality of donor atoms positioned at donor sites in a silicon crystal substrate;
- a plurality of conductive control electrodes arranged about the donor atoms to operate the donor atoms as qubits;
- wherein at least one pair of nearest neighbour donor atoms is arranged along the [110] direction of the silicon crystal substrate in one of a plurality of possible non-equivalent donor-donor positions with respect to each other, wherein each non-equivalent donor-donor position is associated with a normalized exchange coupling value and the variations in the normalized exchange coupling values in respect of all of the plurality of possible non-equivalent donor-donor positions is less than a predetermined factor.
A quantum processing system comprising:
- a plurality of qubits created by positioning donor atoms in a silicon crystal substrate along the [110] direction such that the difference in the magnitude of exchange coupling between pairs of donor atoms is less than a predetermined factor;
- and
- a plurality of control gates arranged about the donor atoms to create detuning fields to increase the exchange coupling value between at least 90% of the pairs of donor atoms to a particular exchange coupling value.
A structure for use in a quantum processing system, the structure comprising:
- a silicon crystal substrate comprising a plurality of donor atom sites arranged along the [110] direction of the silicon crystal substrate, each donor atom site comprising a plurality of possible positions for positioning a donor atom;
- a plurality of donor atoms, each donor atom positioned in a corresponding donor atom site of the plurality of donor atom sites in any one of the plurality of possible positions;
- wherein donor atoms nearest to each other in the [110] direction interact with each other and each pair of nearest neighbour donor atoms has an exchange coupling value, and
- wherein the maximum variation in the exchange coupling values between multiple pairs of nearest neighbour donor atoms is less than a predetermined factor.
Dependencies are inferred from the claim text.