Optoelectronic semiconductor body and light-emitting diode

A light-emitting diode comprising:

• a semiconductor body and electrical connection points for contacting the semiconductor body, the semiconductor body comprising
• an active region comprising a quantum well that generates electromagnetic radiation,
• a first region that impedes passage of charge carriers from the active region, and
• a second region that impedes passage of charge carriers from the active region,
• wherein
• the semiconductor body is based on a nitride compound semiconductor material,
• the first region is directly adjacent to the active region on a p-side,
• the second region is arranged on a side of the first region facing away from the active region,
• the first region has an electronic band gap larger than the electronic band gap of the quantum well and less than or equal to an electronic band gap of the second region,
• the first region and the second region contain aluminum, and
• the active region emits electromagnetic radiation having a peak wavelength of less than 480 nm.