Semiconductor structure and manufacturing method for the semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCHUN-YEN PENG, CHIH-YU CHANG, BO-FENG YOUNG, TE-YANG LAI, SAI-HOOI YEONG, CHI ON CHUI
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Abstract
The present disclosure provides a semiconductor device, including a substrate, a metal gate layer over the substrate, a channel between a source region and a drain region in the substrate, and a ferroelectric layer between the metal gate layer and the substrate, wherein the ferroelectric layer is configured to cause a strain in the channel when applied with an electrical field.
Claims27
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A method for forming a semiconductor structure, comprising:
- forming a fin over a substrate;
- forming a dummy gate over the fin;
- forming a spacer on a sidewall of the dummy gate;
- removing the dummy gate to expose a first portion of the substrate;
- forming a ferroelectric layer on the first portion of the substrate;
- doping the ferroelectric layer with a dopant;
- forming a metal gate layer over the ferroelectric layer;
- and
- crystallizing the ferroelectric layer.
A method for forming a semiconductor structure, comprising:
- forming a fin over a substrate;
- forming a dummy gate over the fin;
- forming a spacer on a sidewall of the dummy gate;
- defining a channel in a substrate by forming a source region and a drain region;
- removing the dummy gate;
- forming a first ferroelectric layer having a U-shaped profile on an inner sidewall of the spacer;
- forming a first dopant layer over the first ferroelectric layer;
- forming a second ferroelectric layer over the first dopant layer;
- forming a metal gate layer over the second ferroelectric layer;
- and
- annealing the first ferroelectric layer, the first dopant layer, and the second ferroelectric layer.
A method for forming a semiconductor structure, comprising:
- forming a source region proximal to a first side of the substrate;
- forming a drain region apart from the source region;
- and
- forming a gate over an area between the source region and the drain region, comprising:
- forming a spacer above the first side of the substrate;
- forming a ferroelectric stack at least laterally surrounded by the spacer, wherein the ferroelectric stack comprises amorphous hafnium oxide;
- forming a gate material layer at least partially surrounded by the ferroelectric stack;
- and
- converting amorphous hafnium oxide of the ferroelectric stack into a first portion of hafnium oxide with orthorhombic phase, a second portion of hafnium oxide with monoclinic phase, and a third portion of hafnium oxide with tetragonal phase.
Dependencies are inferred from the claim text.