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AssigneesZhongshan Institute of Modern Industrial Technology, South China University of Technology, South China University of Technology
InventorsHong WANG, Quanbin ZHOU
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An epitaxial structure of a GaN-based radio frequency device based on a Si substrate and a manufacturing method thereof are provided. The epitaxial structure is composed of a Si substrate (1), an AlN nucleation layer (2), AlGaN buffer layers (3, 4, 5), a GaN:Fe/GaN high-resistance layer (6), a GaN superlattice layer (7), a GaN channel layer (8), an AlGaN barrier layer (9) and a GaN cap layer (10) which are stacked in turn from bottom to top, wherein the GaN:Fe/GaN high-resistance layer (6) is composed of an intentional Fe-doped GaN layer and an unintentional doped GaN layer which are alternately connected; the GaN superlattice layer (7) is composed of a low-pressure/low V/III ratio GaN layer and a high-pressure/high V/III ratio GaN layer which are periodically and alternately connected.
An epitaxial structure of a GaN-based radio frequency device based on a Si substrate, wherein the epitaxial structure of the GaN-based radio frequency device is composed of a Si substrate, an AlN nucleation layer, an AlGaN buffer layer, a GaN:Fe/GaN high-resistance layer, a GaN superlattice layer, a GaN channel layer, an AlGaN barrier layer and a GaN cap layer which are stacked in turn from bottom to top;
Dependencies are inferred from the claim text.