Semiconductor structure and formation method thereof
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
InventorFei ZHOU
Life of this patent
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Abstract
Semiconductor structures and fabrication methods thereof are provided. The method may include providing a substrate; forming a doped source/drain layer on a surface of the substrate; forming a channel pillar on the doped source/drain layer; forming a work function layer on side and top surfaces of the channel pillar; and forming a first isolation layer on the doped source/drain layer. The first isolation layer is on a portion of a sidewall surface of the work function layer. The method also includes forming a gate electrode layer on a surface of the work function layer and a surface of the first isolation layer.
Claims20
A semiconductor structure, comprising:
- a substrate;
- a doped source/drain layer formed on the substrate;
- a channel pillar formed on the doped source/drain layer;
- a work function layer formed on a sidewall surface of the channel pillar;
- a first isolation layer formed over the doped source/drain layer, wherein the first isolation layer is on a portion of a sidewall surface of the work function layer;
- and
- a gate electrode layer formed over a surface of the work function layer and a surface of the first isolation layer.
A method for forming a semiconductor structure, comprising:
- providing a substrate;
- forming a doped source/drain layer on a surface of the substrate;
- forming a channel pillar on the doped source/drain layer;
- forming a work function layer over top and sidewall surfaces of the channel pillar;
- forming a first isolation layer over the doped source/drain layer, wherein the first isolation layer is over a portion of a sidewall surface of the work function layer;
- and
- forming a gate electrode layer over a surface of the work function layer and a surface of the first isolation layer.
Dependencies are inferred from the claim text.