Semiconductor device and method

A method comprising:

• forming a first raised portion of a substrate and a second raised portion of the substrate separated from the first raised portion;
• forming first fins on the first raised portion of the substrate and second fins on the second raised portion of the substrate, wherein the number of second fins formed on the second raised portion is greater than the number of first fins formed on the first raised portion;
• forming an isolation region surrounding the first fins and the second fins;
• forming a first gate structure over the first fins and a second gate structure over the second fins;
• performing a first etching process to form first recesses in the first fins adjacent the first gate structure, the first recesses having a first depth;
• performing a second etching process to form second recesses in the second fins adjacent the second gate structure, the second recesses having a second depth that is greater than the first depth;
• and
• forming a first source/drain regions in the first recesses and second source/drain regions in the second recesses.

A structure comprising:

• a substrate;
• a first semiconductor device in the substrate comprising:
• a fin protruding from the substrate;
• a gate stack extending over the fin;
• a recess in the fin adjacent the gate stack, wherein the recess in the fin has a first depth;
• and
• an epitaxial source/drain region in the recess;
• and
• a second semiconductor device in the substrate comprising:
• two adjacent fins protruding from the substrate;
• a gate stack extending over the two adjacent fins;
• a recess in each of the two adjacent fins adjacent the gate stack, wherein the recess in each of the two adjacent fins has a second depth that is greater than the first depth;
• and
• an epitaxial source/drain region in each recess.