Semiconductor device including back side power supply circuit

A semiconductor device, comprising:

• a substrate;
• a main circuit disposed over a front surface of the substrate;
• and
• a backside power delivery circuit disposed over a back surface of the substrate, wherein:
• the backside power delivery circuit includes:
• a first back side insulating layer disposed over the back surface of the substrate;
• a first main power supply wiring for supplying a first voltage;
• a first local power supply wiring for supplying the first voltage;
• and
• a first switch coupled to the first main power supply wiring and the first local power supply wiring,
• the first main power supply wiring and the first local power supply wiring are embedded in the first back side insulating layer, and
• the first local power supply wiring is coupled to the main circuit via a first through-silicon via (TSV) passing through the substrate for supplying the first voltage.

A semiconductor device, comprising:

• a substrate;
• a main circuit disposed over a front surface of the substrate;
• and
• a backside power delivery circuit disposed over a back surface of the substrate, wherein:
• the backside power delivery circuit includes:
• a first main power supply wiring for supplying a first voltage;
• a second main power supply wiring for supplying a second voltage;
• a first local power supply wiring for supplying the first voltage;
• and
• a first switch coupled to the first main power supply wiring and the first local power supply wiring,
• the first local power supply wiring is coupled to the main circuit via a first through-silicon via (TSV) passing through the substrate for supplying the first voltage, and
• the second main power supply wiring is coupled to the main circuit via a second TSV passing through the substrate for supplying the second voltage.