Via-via spacing reduction without additional cut mask
AssigneeInternational Business Machines Corporation
InventorsDaniel James Dechene, Somnath Ghosh, Hsueh-Chung Chen, Carl Radens, Lawrence A. Clevenger
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Abstract
A method is presented for employing double-patterning to reduce via-to-via spacing. The method includes forming a mandrel layer over a substrate, forming sacrificial hardmask layers over the mandrel layer defining a litho stack, creating a pattern in the litho stack, the pattern having a narrow section connecting two wider sections to define a substantially hour-glass shape, depositing a spacer assuming a shape of the pattern, and etching the litho stack to expose the mandrel layer and metal lines, wherein the metals lines define sharp distal ends reducing a distance between the metal lines.
Claims20
A method for employing double-patterning to reduce via-to-via spacing, the method comprising:
- forming a mandrel layer over a substrate;
- forming sacrificial hardmask layers over the mandrel layer defining a litho stack;
- creating a pattern in the litho stack having a narrow section connecting two wider sections;
- depositing a spacer assuming a shape of the pattern;
- and
- etching the litho stack to expose the mandrel layer and metal lines, wherein the metals lines define sharp distal ends reducing a distance between the metal lines.
A method for employing double-patterning to reduce via-to-via spacing without an additional masking layer, the method comprising:
- creating a pattern in a litho stack formed over a substrate, the pattern having a narrow section connecting two wider sections;
- depositing a spacer assuming a shape of the pattern;
- and
- etching the litho stack to expose metal lines defining sharp distal ends reducing a distance between the metal lines.
A semiconductor structure for employing double-patterning to reduce via-to-via spacing without an additional masking layer, the semiconductor structure comprising:
- a pair of sharp tip-to-tip oriented metal lines with a via disposed at respective distal ends;
- and
- a spacer disposed between the pair of sharp tip-to-tip oriented metal lines, wherein the spacer is pinched off between the pair of sharp tip-to-tip oriented metal lines to electrically isolate the pair of sharp tip-to-tip oriented metal lines.
Dependencies are inferred from the claim text.