Substrate processing apparatus and stage
AssigneeTokyo Electron Limited
InventorsHiroki ENDO, Kazuhito YAMADA, Masanori TAKAHASHI
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AssigneeTokyo Electron Limited
InventorsHiroki ENDO, Kazuhito YAMADA, Masanori TAKAHASHI
Estimating the term…
A substrate processing apparatus for processing a substrate using plasma includes a chamber in which the substrate is accommodated, and a stage arranged inside the chamber and configured to mount the substrate thereon. The stage includes: a base formed by a conductor and configured to allow RF (Radio Frequency) power to flow through the conductor; a substrate holding part provided on the base and configured to hold the substrate; a plurality of heaters provided in the substrate holding part; a heater control part provided inside the base and configured to control electric power to be supplied to each of the plurality of heaters; and an RF filter provided outside the base and connected to a wiring for supplying the electric power to each of the plurality of heaters. The RF filter is provided in common for the plurality of heaters.
A substrate processing apparatus for processing a substrate using plasma, comprising:
A stage arranged inside a chamber of a substrate processing apparatus for processing a substrate using plasma and configured to mount the substrate thereon, comprising:
Dependencies are inferred from the claim text.