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US 2021/0265139 A1Published application
System for controlling radicals using a radical filter
AssigneeApplied Materials, Inc.
InventorChristopher R. Hatem
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Abstract
Provided herein are approaches for controlling radicals in proximity to a wafer. In some embodiments, a system may include a radical source operable to generate radicals in proximity to the wafer, and a filter positioned between the radical source and the wafer, wherein the filter includes a first plate operable to control radicals generated by the radical source. The system may further include an ion source operable to deliver an ion beam to the wafer, wherein the ion beam passes outside the filter.
Claims20
A system, comprising:
- a radical source operable to generate radicals in proximity to a wafer;
- a filter positioned between the radical source and the wafer, wherein the filter includes a first plate operable to control radicals generated by the radical source;
- and
- an ion source operable to deliver an ion beam to the wafer, wherein the ion beam passes outside the filter.
1 more element
An ion implantation system, comprising:
- an ion source operable to deliver an ion beam to a wafer;
- and
- a radical apparatus downstream of the ion source, the radical apparatus comprising:
- a radical source operable to generate radicals in proximity to the wafer;
- and
- a filter positioned between the radical source and the wafer, wherein the filter includes a first plate and a second plate for receiving the radicals therebetween.
3 more elements
A method, comprising:
- delivering an ion beam and radicals toward a wafer;
- and
- controlling the radicals using a filter positioned upstream the wafer, the filter including a first plate and a second plate separated from one another, and the filter receiving the radicals.
Dependencies are inferred from the claim text.