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US 2021/0264982 A1Published application
Memory Device and Programming Method Thereof
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsHaibo Li, Chao Zhang
Life of this patent
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Abstract
A programming method for a memory device includes simultaneously starting to program a first plane and a second plane; and bypassing the first plane and keeping programming the second plane when the first plane has been programmed successfully and the second plane has not been programmed successfully yet.
Claims20
A programming method for a memory device, the programming method comprising:
- simultaneously starting to program a plurality of planes, wherein the plurality of planes comprises a first plane and a second plane;
- and
- bypassing the first plane and keeping programming the second plane when the first plane has been programmed successfully and the second plane has not been programmed successfully yet, wherein successfully-programmed planes of the plurality of planes are bypassed and others of the plurality of planes are kept being programmed.
(canceled)
A memory device, comprising:
- a first plane;
- a second plane;
- and
- a control circuit, configured to control the first plane and the second plane according to a programming method, wherein the programming method comprises:
- simultaneously starting to program a plurality of planes, wherein the plurality of planes comprises a first plane and a second plane;
- and
- bypassing the first plane and keeping programming the second plane when the first plane has been programmed successfully and the second plane has not been programmed successfully yet, wherein successfully-programmed planes of the plurality of planes are bypassed and others of the plurality of planes are kept being programmed.
4 more elements
(canceled)
Dependencies are inferred from the claim text.