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US 2021/0264977 A1Published application
Electronic device and manufacturing method of electronic device
AssigneeSK hynix Inc.
InventorYoung Sam LEE
Life of this patent
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Abstract
An electronic device includes a semiconductor memory comprising column lines, row lines crossing the column lines, memory cells located at intersections between the column lines and the row lines, dummy insulating patterns located adjacent to the memory cells, liner layers formed on sidewalls of the memory cells, and dummy liner layers formed on sidewalls of the dummy insulating patterns.
Claims15
A method of manufacturing an electronic device including a semiconductor memory, the method comprising:
- forming a cell stack in a cell region of a base;
- forming a first insulating layer in a peripheral region of the base;
- forming cell patterns by patterning the cell stack;
- forming first dummy insulating patterns by patterning the first insulating layer;
- forming liner layers on sidewalls of the cell patterns;
- and
- forming dummy liner layers on sidewalls of the first dummy insulating patterns.
4 more elements
Dependencies are inferred from the claim text.