Sensor and Display Device
AssigneeHuawei Technologies Co., Ltd.
InventorKenichi Takatori
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AssigneeHuawei Technologies Co., Ltd.
InventorKenichi Takatori
Estimating the term…
A leakage current characteristic of a sensor that includes an Oxide TFT can be improved by a sensor including a plurality of electric lines including row lines and column lines, a photodiode in a pixel, a drain of a first transistor connected to the photodiode in the pixel, a drain of a second transistor connected in series with a source of the first transistor in the pixel, a source of the second transistor being connected to a column line among the plurality of electric lines, and both a gate of the first transistor and a gate of the second transistor being connected to a row line among the plurality of electric lines, wherein a channel material of the first transistor is different from a channel material of the second transistor.
A sensor comprising:
A sensor comprising:
A display device comprising a sensor and a light emitting portion, the light emitting portion and the sensor are provided in the same pixel, wherein the sensor comprising:
A display device comprising a sensor and a light emitting portion, the light emitting portion and the sensor are provided in the same pixel, wherein the sensor comprising:
A display device, comprising:
Dependencies are inferred from the claim text.