Barrier ruthenium chemical mechanical polishing slurry
AssigneeFujifilm Electronic Materials U.S.A., Inc.
InventorsDavid (Tawei) Lin, Bin Hu, Liqing (Richard) Wen, Yannan Liang, Ting-Kai Huang
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Abstract
A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.
Claims27
A method for removing ruthenium from a semiconductor device, wherein the semiconductor device comprises ruthenium and copper, the method comprising:
- applying a polishing composition to the semiconductor device, wherein the polishing composition comprises:
- an alkali hydroxide;
- an oxygenated halogen;
- a halogen alkyl benzotriazole;
- an abrasive;
- and
- an acid,
- wherein the method further comprises the steps of:
- polishing the semiconductor device with a polishing pad;
- and
- removing ruthenium and copper from the semiconductor device at a selectivity ratio of ruthenium to copper that is greater than 1.2.
A method for removing ruthenium from a semiconductor device, wherein the semiconductor device comprises ruthenium and copper, the method comprising:
- applying a polishing composition to the semiconductor device, wherein the composition comprises:
- potassium hydroxide, present in an amount of about 0.01 wt % to about 10 wt %, based on the total weight of the composition;
- hydrogen periodate, present in an amount of about 0.1 wt % to about 10 wt %, based on the total weight of the composition;
- chloro methyl benzotriazole, present in an amount of about 0.001 wt % to about 0.08 wt %, based on the total weight of the composition;
- silica, present in an amount of about 0.01 wt % to about 12 wt %, based on the total weight of the composition;
- and
- malonic acid, present in an amount of about 0.01 wt % to about 10 wt %, based on the total weight of the composition,
- wherein the method further comprises the steps of:
- polishing the semiconductor device with a polishing pad;
- and
- removing ruthenium and copper from the semiconductor device at a selectivity ratio of ruthenium to copper that is greater than 2.5.
Dependencies are inferred from the claim text.