US 2021/0243860 A1Published application

Semiconductor device

AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation

InventorJunichi Chisaka

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Abstract

According to one embodiment, a semiconductor device includes a first current mirror having an output end coupled to a first node, a second current mirror having an output end coupled to a second node, a third current mirror having an input end coupled to the second node and an output end coupled to the first node, a fourth current mirror having an input end coupled to the first node, and an output driver that generate a current based on the fourth current mirror. A current flows to the first current source changes at a first ratio with respect to temperature, a current flows to the second current source changes at a second ratio having a negative correlation with respect to temperature, and an absolute value of the first ratio is smaller than that of the second ratio.

Claims19

Dependent claims

A semiconductor device comprising:

a first current source;
a first current mirror having an input end coupled to the first current source and an output end coupled to a first node;
a second current source;
a second current mirror having an input end coupled to the second current source and an output end coupled to a second node;
a third current mirror having an input end coupled to the second node and an output end coupled to the first node;
a fourth current mirror having an input end coupled to the first node;
and
an output driver configured to generate a current based on a current that flows to the output end of the fourth current mirror,
wherein a current that flows to the first current source changes at a first ratio with respect to temperature,
a current that flows to the second current source changes at a second ratio having a negative correlation with respect to the temperature, and
an absolute value of the first ratio is smaller than an absolute value of the second ratio.

8 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/999,287Filed 21 Aug 2020
Priority: JP 2020-01336330 Jan 2020
Published: 5 Aug 2021
Term ends: Not estimatedThe source records don’t support an estimate.

Classification8 codes

H05B 45/18
Controlling the intensity of the light: using temperature feedback
G05F 3/245
With compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature,…:…
G05F 3/265
Current mirrors: using bipolar transistors only
H05B 45/397
Linear regulators: current mirror circuits

Family

US 11,395,386 B2Related patent
US 2021/0243860 A1This patent

From the US filing history. Foreign family members aren’t listed.

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