Solid-state imaging element and imaging device

Abstract

To improve the conversion efficiency of converting charge to voltage in a solid-state imaging element that stores charge in a charge storage unit. A high-sensitivity-side transfer transistor is configured to transfer a charge from a high-sensitivity photodiode having a sensitivity higher than a predetermined sensitivity to a first charge storage unit. A low-sensitivity-side transfer transistor is configured to transfer a charge from a low-sensitivity photodiode having a sensitivity lower than the predetermined sensitivity to a second charge storage unit. An amplification transistor is configured to amplify a voltage of the first charge storage unit. A first conversion efficiency control transistor is configured to control a conversion efficiency of converting the charge to the voltage by opening and closing a pathway between the first and second charge storage units. A second conversion efficiency control transistor is configured to control the conversion efficiency by opening and closing a pathway between the second charge storage unit and a third charge storage unit.

Dependencies are inferred from the claim text.