US 2021/0242869 A1 · SEMICONDUCTOR DEVICE

Abstract

A semiconductor device, including a power supply terminal, an output terminal, a ground terminal, an N-channel main MOSFET connected between the power supply terminal and the output terminal, a drive circuit which operates to drive the main MOSFET, using a potential difference, between the power supply terminal and an internal ground, as a power supply thereof, an internal ground generation circuit which is provided between the power supply terminal and the ground terminal and which generates the internal ground, an N-channel first MOSFET provided between an output terminal of the internal ground generation circuit and the ground terminal, and a low voltage detection circuit which is provided between the power supply terminal and the ground terminal, and which turns on the first MOSFET upon detecting that a voltage between the power supply terminal and the ground terminal drops below a prescribed voltage.

Claims7

Dependent claims

A semiconductor device, comprising:

a power supply terminal;
an output terminal;
a ground terminal;
an N-channel main metal-oxide-semiconductor field-effect transistor (MOSFET) connected between the power supply terminal and the output terminal;
a drive circuit which operates to drive the main MOSFET, using a potential difference, between the power supply terminal and an internal ground, as a power supply thereof;
an internal ground generation circuit which is provided between the power supply terminal and the ground terminal, and which generates the internal ground;
an N-channel first MOSFET provided between an output terminal of the internal ground generation circuit and the ground terminal;
and
a low voltage detection circuit which is provided between the power supply terminal and the ground terminal, and which turns on the N-channel first MOSFET upon detecting that a voltage between the power supply terminal and the ground terminal drops below a prescribed voltage.

6 more elements

A semiconductor device, comprising:

a power supply terminal;
an output terminal;
a ground terminal;
a main metal-oxide-semiconductor field-effect transistor (MOSFET) connected between the power supply terminal and the output terminal;
a drive circuit which operates to drive the main MOSFET, using a potential difference, between the power supply terminal and an internal ground, as a power supply thereof;
an internal ground generation circuit which includes
a first MOSFET which is connected to the power supply terminal and is turned off in response to the main MOSFET being turned on,
a second MOSFET which is connected in series with the first MOSFET, the second MOSFET and the first MOSFET having a first connection node therebetween as the internal ground,
a third MOSFET which is connected between the second MOSFET and the ground terminal and which is turned on in response to the main MOSFET being turned on,
a Zener diode which is connected between the power supply terminal and a gate terminal of the second MOSFET, and which outputs a reference voltage for generating the potential difference, and
a current source connected between the gate terminal of the second MOSFET and the ground terminal;
a fourth MOSFET connected between a second connection node, to which the second MOSFET and the third MOSFET are connected, and the first connection node;
and
a low voltage detection circuit which is connected between the power supply terminal and the second connection node, and which turns on the fourth MOSFET upon detecting that a voltage between the power supply terminal and the second connection node drops below a prescribed voltage, wherein
each of the first and second MOSFETs is a P-channel MOSFET, and
each of the main MOSFET, the third MOSFET and the fourth MOSFET is an N-channel MOSFET.

13 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims7