Monolithic Integrated BAW Resonator Production Method

A monolithic integrated bulk acoustic wave (BAW) resonator production method, comprising:

• forming an imprint template, wherein the imprint template comprises an imprint plate and a plurality of imprint dies protruding from a surface of the imprint plate, and at least two imprint dies of the plurality of imprint dies have different heights relative to the surface of the imprint plate;
• forming a mask material layer on a substrate;
• pressing the mask material layer in a direction of the substrate using the imprint template, to form, on the mask material layer through imprinting, a mask pattern layer, wherein the mask pattern layer comprises a plurality of mask grooves having depths corresponding to heights of the imprint dies;
• plasma etching the substrate using the mask material layer as a mask, to form, on a surface of the substrate, grooves that one-to-one correspond to positions of the plurality of mask grooves, wherein depths of at least two grooves in the grooves are different;
• and
• forming, in the grooves, bottom electrode layers, piezoelectric layers, and top electrode layers that are sequentially stacked, wherein in a direction perpendicular to the substrate, thicknesses of the bottom electrode layers are the same and are all less than depths of the grooves, and piezoelectric layer thicknesses of at least two piezoelectric layers are different, or top electrode layer thicknesses of at least two top electrode layers are different.

A method, comprising:

• forming an imprint template, wherein the imprint template comprises an imprint plate and a plurality of imprint dies protruding from a surface of the imprint plate, and at least two imprint dies of the plurality of imprint dies have different heights relative to the surface of the imprint plate;
• forming a mask material layer on a substrate;
• applying the imprint template to the mask material layer, to form, on the mask material layer, a mask pattern layer, wherein the mask pattern layer comprises a plurality of mask grooves having different depths;
• etching the substrate using the mask material layer as a mask, to form, on a surface of the substrate, grooves that correspond to positions of the plurality of mask grooves, wherein depths of at least two grooves in the grooves are different;
• and
• forming, in the grooves, bottom electrode layers, piezoelectric layers, and top electrode layers that are stacked, wherein in a direction perpendicular to the substrate, thicknesses of the bottom electrode layers are the same and are all less than depths of the grooves, and piezoelectric layer thicknesses of at least two piezoelectric layers are different, or top electrode layer thicknesses of at least two top electrode layers are different.