Power amplifier circuit

A power amplifier circuit comprising:

• a first transistor on a semiconductor substrate;
• a second transistor on the semiconductor substrate, the semiconductor substrate having a base supplied with a first current and being configured to supply a bias current based on the first current to the first transistor;
• a current output circuit element on the semiconductor substrate, the current output circuit element being supplied with a second current and being configured to output a third current based on the second current, the second current increasing in accordance with a rise in temperature;
• a third transistor on the semiconductor substrate, the third transistor having a collector supplied with a fourth current and an emitter configured to output the second current based on the fourth current;
• and
• wiring comprising a plurality of metal layers that are electrically connected to an emitter of the first transistor, and that are stacked on top of each other,
• wherein the first current, the second current, and the fourth current are part of a control current, and
• wherein as seen in a plan view of the semiconductor substrate:
• the plurality of metal layers overlap the first transistor and an area between the first transistor and an area defined by the second transistor, the current output circuit element, and the third transistor,
• at least one of the plurality of metal layers further overlaps the area defined by the second transistor, the current output circuit element, and the third transistor.

A power amplifier circuit comprising:

• a first transistor on a semiconductor substrate;
• a second transistor on the semiconductor substrate, the second transistor having a base supplied with a first current and being configured to supply a bias current based on the first current to the first transistor;
• a current output circuit element on the semiconductor substrate, the current output circuit element being supplied with a second current and being configured to output a third current based on the second current, the second current increasing in accordance with a rise in temperature;
• and
• wiring comprising a plurality of metal layers that are electrically connected to a collector of the first transistor, and that are stacked one on top of each other,
• wherein the first current and the second current are part of a control current, and
• wherein, as seen in a plan view of the semiconductor substrate:
• the plurality of metal layers overlap the first transistor and an area between the first transistor and the current output circuit element, and
• at least one of the plurality of metal layers overlaps the second transistor.