Magnetic memory device

A magnetic memory device, comprising:

• a bottom electrode, a magnetic tunnel junction pattern, and a top electrode that are sequentially stacked on a substrate,
• wherein the magnetic tunnel junction pattern comprises:
• a free layer;
• a pinned layer between the bottom electrode and the free layer;
• and
• a tunnel barrier layer between the pinned layer and the free layer,
• wherein, in a direction parallel to a top surface of the substrate, a middle portion of the pinned layer is wider than an upper portion of the pinned layer and is wider than a lower portion of the pinned layer.

A magnetic memory device, comprising:

• a lower contact plug connected to a select element on a substrate;
• and
• a data storage structure comprising a magnetic tunnel junction pattern on the lower contact plug,
• wherein a first thickness of the lower contact plug is about 2.0 to 3.6 times a second thickness of the data storage structure in a first direction perpendicular to a top surface of the substrate, and
• wherein, a middle portion of the magnetic tunnel junction pattern is wider than an upper portion and a lower portion of the magnetic tunnel junction pattern in a second direction parallel to the top surface of the substrate.