Magnetic tunneling junctions with a magnetic barrier

Abstract

Advanced magnetic tunneling junctions (MTJs) that dramatically reduce power consumption (switching energy, ESW) while maintaining a reasonably high tunneling magnetoresistance (on/off ratio, TMR) and strong thermal stability at room temperature are described herein. The MTJs include a magnetic insulator, such as an antiferromagnetice material, as the tunnel barrier. A more energy efficient switching in the MTJs is achieved by exchange bias switching (EB) due to the magnetoelectric effect (ME) or by magnon assisted switching.

Dependencies are inferred from the claim text.