Methods for forming thermoelectric elements

A method for forming a thermoelectric element having a figure of merit (ZT) that is at least about 0.2, comprising:

• (a) providing a chamber comprising a first substrate in contact with a second substrate, wherein said first substrate and said second substrate are disposed between and in electrical communication with a plurality of electrodes;
• and
• (b) using said plurality of electrodes to apply an electrical potential across said first substrate and said second substrate to direct electrical current through said first substrate and said second substrate to form a thermoelectric element comprising a pattern of holes, wherein said thermoelectric element is formed at a temperature from about 100° C. and 1000° C., and wherein said thermoelectric element has a ZT that is at least about 0.2.

The method of claim 6, wherein each of said first substrate and said second substrate comprises one or more members selected from the group consisting of bismuth, antimony, and tellurium.

A method for forming a thermoelectric element having a figure of merit (ZT) that is at least about 0.2, comprising:

• (a) providing a chamber comprising a first substrate in contact with a second substrate, wherein said first substrate and said second substrate are disposed between and in electrical communication with a plurality of electrodes, wherein said chamber comprises an inert gas;
• and
• (b) using said plurality of electrodes to apply an electrical potential across said first substrate and said second substrate to direct electrical current through said first substrate and said second substrate to form a thermoelectric element comprising a pattern of holes, wherein said thermoelectric element has a ZT that is at least about 0.2.