Single chip multi band led

A light emitting diode, comprising:

• an n-type nitride semiconductor layer;
• a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit;
• an active layer located on the V-pit generation layer;
• a p-type AlGaN layer located on the active layer;
• and
• a p-type nitride semiconductor layer located on the p-type AlGaN layer, wherein:
• the active layer includes a well layer, the well layer including a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer, and
• the first well layer portion emit light having a first peak wavelength and the second well layer portion emit light having a second peak wavelength different from the first peak wavelength;
• wherein the light emitting diode includes no phosphor.