Semiconductor element, semiconductor device and semiconductor system

A semiconductor device, comprising:

• a semiconductor element;
• and
• a light emitting element;
• the semiconductor element including a channel-forming region,
• the semiconductor element including a hole-injection region that supplies holes into the channel-forming region,
• the hole-injection region including a p-type dopant,
• the semiconductor element including a crystal layer having a band gap, and
• the light emitting element that is configured to emit a light having an energy smaller than the band gap of the crystal layer, and the light emitting element that is configured to irradiate light to at least
• a part of the crystal layer.

A semiconductor element, comprising:

• a first electrode;
• a second electrode;
• an n−-type semiconductor layer;
• and
• a low electrically conductive layer,
• the low electrically conductive layer that is arranged between the first electrode and the n−-type semiconductor layer,
• a first barrier height of the first electrode is larger than a second barrier height of the second electrode,
• a first electrical resistivity of the low electrically conductive layer is equal to or more than 1000 times as large as a second electrical resistivity of the n−-type semiconductor layer, and
• the semiconductor element that is configured to be able to irradiate light from an outside to at least a part of the low electrically conductive layer.