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US 2021/0242361 A1Published application
Photodetection element
AssigneeNEC Corporation
InventorYuichi IGARASHI
Life of this patent
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Abstract
A photodetection element that includes: a substrate with a high infrared transmittance in a desired wavelength region; an electron barrier layer of a type-I superlattice structure, the electron barrier layer being formed above the substrate and lattice-matched to the substrate; and a light-receiving layer of a type-II superlattice structure, formed in contact with the electron barrier layer.
Claims20
A photodetection element comprising:
- a substrate with a high infrared transmittance in a desired wavelength region;
- an electron barrier layer of a type-I superlattice structure, the electron barrier layer being formed above the substrate and lattice-matched to the substrate;
- and
- a light-receiving layer of a type-II superlattice structure, formed in contact with the electron barrier layer.
1 more element
Dependencies are inferred from the claim text.