US 2021/0242352 A1 · DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF

Abstract

A diode structure and a manufacturing method are disclosed. The diode structure includes a semiconductor substrate, a first semiconductor layer, a second semiconductor layer and an epitaxy layer. The semiconductor substrate includes a first surface. The first semiconductor layer and the second semiconductor layer are extended toward the interior of the semiconductor substrate from the first surface by implanting a dopant. Both of the semiconductor types of the first semiconductor layer and the second semiconductor layer are opposite to the semiconductor type of the semiconductor substrate. The epitaxy layer is formed on the first surface, connected with the first semiconductor layer and the second semiconductor layer and extended outwardly from the first surface. The first semiconductor layer and the second semiconductor layer are connected with each other, continuously. The concentration distribution of the dopant within the first semiconductor layer and the second semiconductor layer is in a discontinuous curve.

Claims10

Dependent claims

A diode structure, comprising:

a semiconductor substrate comprising a first surface;
a first semiconductor layer extended toward the interior of the semiconductor substrate from the first surface of the semiconductor substrate by implanting a dopant, wherein the semiconductor type of the first semiconductor layer is opposite to the semiconductor type of the semiconductor substrate;
a second semiconductor layer extended toward the interior of the semiconductor substrate from the first surface of the semiconductor substrate by implanting the dopant, wherein the semiconductor type of the second semiconductor layer is opposite to the semiconductor type of the semiconductor substrate;
an epitaxy layer formed on the first surface of the semiconductor substrate, connected with the first semiconductor layer and the second semiconductor layer and extended outwardly from the first surface;
wherein the first semiconductor layer and the second semiconductor layer are connected with each other, continuously, and the concentration distribution of the dopant within the first semiconductor layer and the second semiconductor layer is in a discontinuous curve.

2 more elements

A manufacturing method of a diode structure, comprising steps of:

(a) providing a semiconductor substrate, wherein the semiconductor substrate comprises a first surface;
(b) disposing at least one photoresist on the first surface of the semiconductor substrate;
(c) implanting a dopant from the first surface of the semiconductor substrate to form a first semiconductor layer, wherein the semiconductor type of the first semiconductor layer is opposite to the semiconductor type of the semiconductor substrate;
(d) removing the photoresist and diffusing the first semiconductor layer in the semiconductor substrate;
(e) disposing the at least one photoresist on the first surface of the semiconductor substrate;
(f) implanting the dopant from the first surface of the semiconductor substrate to form a second semiconductor layer within the first semiconductor layer, wherein the semiconductor type of the second semiconductor layer is opposite to the semiconductor type of the semiconductor substrate;
(g) removing the photoresist and diffusing the first semiconductor layer and the second semiconductor layer in the semiconductor substrate;
and
(h) forming an epitaxy layer on the first surface of the semiconductor substrate.

6 more elements

Dependencies are inferred from the claim text.

Diode structure and manufacturing method thereof

Life of this patent

Diode structure and manufacturing method thereof

Life of this patent

Abstract

Claims10