Thin film transistor, manufacturing method of thin film transistor, and liquid crystal display

A manufacturing method of the thin film transistor, comprising the steps:

• providing a substrate;
• forming an active region on the substrate;
• forming a channel region arranged in a center of the active region;
• forming source and drain regions arranged on two sides of the channel region;
• forming a gate dielectric layer arranged above the channel region;
• forming a reflective coating above the gate dielectric layer;
• forming a gate metal arranged above the reflective coating;
• forming an interlayer dielectric layer that covers the gate metal, the active region, and the substrate;
• and
• forming a source/drain metal layer passes through the interlayer dielectric layer and electrically connecting with a surface of the source and drain regions.

A liquid crystal display comprising a thin film transistor array, wherein the thin film transistor array comprises a plurality of thin film transistors which are electrically connected with each other, each of the thin film transistors comprising:

• a substrate;
• an active region arranged above the substrate;
• a channel region arranged in a center of the active region;
• source and drain regions arranged on two sides of the channel region;
• a gate dielectric layer arranged above the channel region;
• a reflective coating arranged above the gate dielectric layer;
• a gate metal arranged above the reflective coating;
• an interlayer dielectric layer covering the gate metal, the active region, and the substrate;
• and
• a source/drain metal layer passing through the interlayer dielectric layer and electrically connecting with a surface of the source and drain regions.