Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor

A display, comprising:

• a metal layer;
• an insulating member being in contact with the metal layer;
• a field-effect transistor, the field-effect transistor comprising a gate electrode disposed on the insulating member on the opposite side where the metal layer is provided, a gate insulating layer contacting the gate electrode, an active layer disposed on the gate insulating layer on the opposite side where the gate electrode is provided, a source electrode and a drain electrode, the source electrode and the drain electrode being in contact with the active layer;
• and
• a light-emitting device comprising a light-emitting layer and a pair of electrodes between which the light-emitting layer is interposed, one electrode of the pair of electrodes being electrically connected to the field-effect transistor, wherein
• the active layer includes an amorphous oxide, has a light transmittance of 70% or more in a wavelength range of 400 to 800 nm, and generates photocarriers by irradiation with light having a wavelength range of 500 nm or more,
• the metal layer shields light in a wavelength range of 400 to 800 nm and configured to suppress a current flowing between the source electrode and the drain electrode, the current being derived from the photocarriers,
• the gate electrode, the source electrode and the drain electrode include metal material,
• the metal layer is not electrically connected with the gate electrode,
• a part of the metal layer and a region of the active layer between the source electrode and the drain electrode overlap each other as viewed from a direction perpendicular to the metal layer,
• an interlayer-insulating layer is provided between the light-emitting device and the field-effect transistor,
• the one electrode of the pair of electrodes and the field-effect transistor are connected via a contact hole provided in the interlayer-insulating layer, and
• a current flowing into the light-emitting device is controlled by a voltage imposed to the gate electrode of the filed-effect transistor.

A display, comprising:

• a metal layer;
• an insulating member being in contact with the metal layer;
• a field-effect transistor, the field-effect transistor comprising a gate electrode disposed on the insulating member on the opposite side where the metal layer is provided, a gate insulating layer contacting the gate electrode, an active layer disposed on the gate insulating layer on the opposite side where the gate electrode is provided, a source electrode and a drain electrode, the source electrode and the drain electrode being in contact with the active layer;
• and
• a light-emitting device comprising a light-emitting layer and a pair of electrodes between which the light-emitting layer is interposed, wherein
• the active layer includes an amorphous oxide, has a light transmittance of 70% or more in a wavelength range of 400 to 800 nm, and generates photocarriers by irradiation with light having a wavelength range of 500 nm or more,
• the metal layer shields light in a wavelength range of 400 to 800 nm and configured to suppress a current flowing between the source electrode and the drain electrode, the current being derived from the photocarriers,
• the gate electrode, the source electrode and the drain electrode include metal material,
• the metal layer is not electrically connected with the gate electrode,
• a part of the metal layer and a region of the active layer between the source electrode and the drain electrode overlap each other as viewed from a direction perpendicular to the metal layer, and
• the filed-effect transistor is a switching element.

A display, comprising:

• a metal layer;
• an insulating member being in contact with the metal layer;
• a field-effect transistor, the field-effect transistor comprising an active layer disposed on the insulating member on the opposite side where the metal layer is provided, a gate electrode disposed, via a gate insulating layer, on the active layer on the opposite side where the insulating member is provided, a source electrode and a drain electrode, the source electrode and the drain electrode being disposed on the active layer on the same side as the gate electrode, and being in contact with the active layer;
• and
• a light-emitting device comprising a light-emitting layer and a pair of electrodes between which the light-emitting layer is interposed, one electrode of the pair of electrodes being electrically connected to the field-effect transistor, wherein
• the active layer includes an amorphous oxide, has a light transmittance of 70% or more in a wavelength range of 400 to 800 nm, and generates photocarriers by irradiation with light having a wavelength range of 500 nm or more,
• the metal layer shields light in a wavelength range of 400 to 800 nm and configured to suppress a current flowing between the source electrode and the drain electrode, the current being derived from the photocarriers,
• the gate electrode, the source electrode and the drain electrode include metal material,
• the metal layer is not electrically connected with the gate electrode,
• a part of the metal layer and a region of the active layer between the source electrode and the drain electrode overlap each other as viewed from a direction perpendicular to the metal layer,
• an interlayer-insulating layer is provided between the light-emitting device and the field-effect transistor,
• the one electrode of the pair of electrodes and the field-effect transistor are connected via a contact hole provided in the interlayer-insulating layer, and
• a current flowing into the light-emitting device is controlled by a voltage imposed to the gate electrode of the filed-effect transistor.

A display, comprising:

• a metal layer;
• an insulating member being in contact with the metal layer,
• a field-effect transistor, the field-effect transistor comprising an active layer disposed on the insulating member on the opposite side where the metal layer is provided, a gate electrode disposed, via a gate insulating layer, on the active layer on the opposite side where the insulating member is provided, a source electrode and a drain electrode, the source electrode and the drain electrode being disposed on the active layer on the same side as the gate electrode, and being in contact with the active layer;
• and
• a light-emitting device comprising a light-emitting layer and a pair of electrodes between which the light-emitting layer is interposed, wherein
• the active layer includes an amorphous oxide, has a light transmittance of 70% or more in a wavelength range of 400 to 800 nm, and generates photocarriers by irradiation with light having a wavelength range of 500 nm or more,
• the metal layer shields light in a wavelength range of 400 to 800 nm and configured to suppress a current flowing between the source electrode and the drain electrode, the current being derived from the photocarriers,
• the gate electrode, the source electrode and the drain electrode include metal material,
• the metal layer is not electrically connected with the gate electrode,
• a part of the metal layer and a region of the active layer between the source electrode and the drain electrode overlap each other as viewed from a direction perpendicular to the metal layer,
• an interlayer-insulating layer is provided between the light-emitting device and the field-effect transistor,
• the one electrode of the pair of electrodes and the field-effect transistor are connected via a contact hole provided in the interlayer-insulating layer, and
• the filed-effect transistor functions as a switching element.