Laterally Diffused MOSFET with Low Rsp*Qg Product

A laterally diffused MOSFET device comprising:

• a source region in an active layer;
• a drain region in the active layer;
• a body region in the active layer between the source region and the drain region;
• a drift region in the active layer between the body region and the drain region, wherein the drift region extends to a top surface of the active layer for an entire lateral extent between the body region and the drain region without a shallow trench isolation region or a local oxidation of silicon isolation region between the body region and the drain region;
• a stepped gate having a first portion disposed over the body region and a second portion disposed over a first portion of the drift region;
• a first gate insulator region between the first portion of the stepped gate and the body region;
• and
• a second gate insulator region between the second portion of the stepped gate and the first portion of the drift region.