Ic structure base and inner e/c material on raised insulator, and methods to form same

An integrated circuit (IC) structure, comprising:

• a semiconductor base on an insulative layer;
• a first inner emitter/collector (E/C) material on the insulative layer adjacent a first sidewall of the semiconductor base;
• and
• a first outer E/C material on the insulative layer adjacent the first inner E/C material, wherein a height of the first outer E/C material above the insulative layer is greater than a height of the first inner E/C material above the insulative layer.

A method of forming an integrated circuit (IC) structure, the method comprising:

• providing a structure including:
• an insulative layer on a substrate, the insulative layer including a first region and a second region adjacent the first region,
• a semiconductor base on a portion of an upper surface of the first region of the insulative layer, and
• a first inner emitter/collector (E/C) material on the portion of the upper surface of the first region of the insulative layer and adjacent a first sidewall of the semiconductor base;
• partially recessing the second region of the insulative layer above the substrate to convert the first region of the insulative layer into a raised region adjacent the second region;
• and
• forming an outer E/C material on the recessed second region of the insulative layer, wherein the first outer E/C material is directly adjacent the first inner E/C material.