Semiconductor device and method of manufacturing the same

A semiconductor device, comprising:

• a plurality of semiconductor layers vertically arranged over a bottom fin structure and each having a channel region and a source/drain region;
• a source/drain epitaxial layer wrapping around the source/drain region of each of the plurality of semiconductor layers;
• a gate structure comprising:
• a gate dielectric layer wrapping around the channel region of each of the plurality of semiconductor layers;
• and
• a gate electrode layer disposed on the gate dielectric layer;
• and
• an inner spacer disposed in a recess formed between the source/drain epitaxial layer and the gate structure at an end of the channel region.

A semiconductor device, comprising:

• a plurality of semiconductor layers vertically arranged over a bottom fin structure and each having a channel region and a source/drain region;
• a source/drain epitaxial layer;
• a gate structure comprising:
• a gate dielectric layer wrapping around the channel region of each of the plurality of semiconductor layers;
• and
• a gate electrode layer disposed on the gate dielectric layer;
• and
• dielectric spacers disposed in recesses formed between the source/drain epitaxial layer and the gate structure, wherein:
• the dielectric spacers are disposed inside the source/drain epitaxial layer, and
• an end of each of the dielectric spacers facing the source/drain epitaxial layer is convex toward the source/drain epitaxial layer.