Backside contact of a semiconductor device

A method of fabricating a semiconductor device, comprising:

• forming a transistor above a substrate, wherein the transistor comprises a gate region, a channel region, a source region, and a drain region, wherein the gate region is adjacent to the channel region, and wherein the gate region comprises:
• a first portion disposed above a portion of an upper surface of the channel region;
• and
• a second portion extending orthogonally from the first portion and disposed adjacent to a portion of a first lateral surface of the channel region;
• and
• forming a backside gate contact that is electrically coupled to a bottom surface of the second portion of the gate region and that extends below a bottom surface of the substrate.